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HF vapor is generated in a fumer unit and fed into the reaction
chamber via jet inlets. The HF vapor condenses on the cooled wafer
dissolving the surface oxide (native or thermal) according to the
chemical reaction:
6 HF + SiO2 → H2SiF6 ↑
+ 2 H2O (residue)
The residual wafer contains the impurities from the outer surface,
the oxide and the silicon/oxide interface. After the etching process,
the chamber is purged by nitrogen to remove the HF vapor, before
the chamber hood is opened. For VPD residue collection the wafer
is subsequently processed with the PAD-Scan (Programmable Automatic
Droplet Scanner).
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